Scanning electron microscopy Nova Nano SEM 450
Source NSFEG with ultra-high brightness Schottky field emitter, High and low vacuum analysis Resolution high-vacuum imaging, optimum working distance - 0.8 nm at 30 kV (STEM) - 1.0 nm at 15 kV (TLD-SE) - 1.4 nm at 1 kV (TLD–SE without beam deceleration; requires a Plasma Cleaner) - 3.5 nm at 100 V (DBS) HR-SEM microstructure imaging (SE, BSE) EDS, WDS analysis of the chemical composition Crystallographic orientation analyzes (EBSD) STEM imaging, Oil-free pump system.
Under contracts and commissioned research tasks/authorization of the head of the IPiAM Department
Testing the morphology and chemical composition of non-conductive samples in low and variable vacuum, Orientation topography analysis of fine-crystalline materials with full phase identification, Point, line and surface analyzes of elements using EDXS and WDXS spectrometers, Analysis of crystallographic orientations using backscattered electron diffraction EBSD and transmission diffraction EBSD.
Responsible body
Group / laboratory / team
Scanning electron microscopy laboratory/KIPiAM https://kipiam.agh.edu.pl/