Scanning Electron Microscope setup
SEM microscopes with electron (FEG) and ionic columns (Gallium – Scios 2). The SEMs include EDS spectroscopes (EDAX), catodoluminescence (GATAN AMETEK) and time of flight secondary ions mass spectroscope, TOF-SIMS. The microscopes are equipped with a broad selection of semiconductive and scintillated detectors, including the STEM one. Both, electrostatic and electromagnetic optics are implemented. The Scios 2 has a micromilling feature with focused Gallium ion beam, enabling it to prepare the TEM thin films. The Scios 2 microscope is also equipped with the secondary ion detectors and is capable to visualize a sample with secondary electrons emitted as a result of interaction with primary ion beam. The Apreo 2 includes EBSD detector as well as ECCI mode (electron channeling contras imaging). Both the microscopes are also able to work in low vacuum mode, 10 – 500 Pa.
Operation only by the stuff of Departmental Laboratory of Scanning Electron Microscopy and Microanalysis WIMiC. Order/contract/other form of collaboration upon arrangement.
Surface and 3D imaging also with the orientation and electron channeling contrast, mapping of the elements, optical properties measurements and electronic structure studies (CL), measurements of crystalline structure (EBSD) and its defects (dislocations, etc.), micro-milling.
Accelerating voltage for electron beam 0.2 – 30 kV and 0.5 – 30 kV for ion beam. Landing energy: 20ev to 30 keV. Electron beam current 1 pA to 50 nA. Ion beam current 1.5 pA to 65 nA. EDS down to Beryllium (spectra resolution 129 eV). TOF-SIMS up to 500 u. Standard WD 7 and 10 mm. Maximum HFW: 3mm. Chamber vacuum up to 7x10-6 Pa (HVac) or 10 – 500 Pa (LVac). Maximum sample diameter: 122 mm, standard 5 mm. Stage tilt -15/+90o.
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